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This model typically applies when charge carriers have been emitted from some region of a solid—the cloud of emitted carriers can form a space charge region if they are sufficiently spread out, or the charged atoms or molecules left behind in the solid can form a space charge region. Space charge effects are most pronounced in dielectric ...
In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region, space charge region, or space charge layer, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers have diffused away, or been forced away by an electric field. The only elements left ...
The mathematical theory of Landau damping is somewhat involved (see § Mathematical treatment).However, in the case of waves with finite amplitude, there is a simple physical interpretation [2]: §7.5 which, though not strictly correct, helps to visualize this phenomenon.
Viewed from a large distance, this screening hole has the effect of an overlaid positive charge which cancels the electric field produced by the electron. Only at short distances, inside the hole region, can the electron's field be detected. For a plasma, this effect can be made explicit by an -body calculation.
The thickness of such a layer is several Debye lengths thick, a value whose size depends on various characteristics of plasma (e.g. temperature, density, etc.). A Debye sheath arises in a plasma because the electrons usually have a temperature on the order of magnitude or greater than that of the ions and are much lighter.
When recombination in the space-charge region dominate other recombination, however, n = 2. The effect of changing ideality factor independently of all other parameters is shown for a crystalline silicon solar cell in the I-V curves displayed in the figure to the right.
The Early effect in bipolar junction transistors is due to an effective decrease in the base width because of the widening of the base-collector depletion region, resulting in an increase in the collector current with an increase in the collector voltage. The same type of length modulation in MOSFETs is also commonly referred to as Early effect.
The Poisson–Boltzmann equation describes a model proposed independently by Louis Georges Gouy and David Leonard Chapman in 1910 and 1913, respectively. [3] In the Gouy-Chapman model, a charged solid comes into contact with an ionic solution, creating a layer of surface charges and counter-ions or double layer. [4]