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In general, Mott insulators occur when the repulsive Coulomb potential U is large enough to create an energy gap. One of the simplest theories of Mott insulators is the 1963 Hubbard model. The crossover from a metal to a Mott insulator as U is increased, can be predicted within the so-called dynamical mean field theory.
Neuromorphic engineering is an interdisciplinary subject that takes inspiration from biology, physics, mathematics, computer science, and electronic engineering [4] to design artificial neural systems, such as vision systems, head-eye systems, auditory processors, and autonomous robots, whose physical architecture and design principles are ...
Mead's contributions have arisen from the application of basic physics to the development of electronic devices, often in novel ways. During the 1960s, he carried out systematic investigations into the energy behavior of electrons in insulators and semiconductors, developing a deep understanding of electron tunneling, barrier behavior and hot electron transport. [13]
The Mott insulating phases are characterized by integer boson densities, by the existence of an energy gap for particle-hole excitations, and by zero compressibility. The superfluid is characterized by long-range phase coherence, a spontaneous breaking of the Hamiltonian's continuous U ( 1 ) {\displaystyle U(1)} symmetry, a non-zero ...
Charge-transfer insulators are a class of materials predicted to be conductors following conventional band theory, but which are in fact insulators due to a charge-transfer process. Unlike in Mott insulators , where the insulating properties arise from electrons hopping between unit cells, the electrons in charge-transfer insulators move ...
Mott showed that the probability of hopping between two states of spatial separation and energy separation W has the form: [] where α −1 is the attenuation length for a hydrogen-like localised wave-function. This assumes that hopping to a state with a higher energy is the rate limiting process.
Spintronics emerged from discoveries in the 1980s concerning spin-dependent electron transport phenomena in solid-state devices. This includes the observation of spin-polarized electron injection from a ferromagnetic metal to a normal metal by Johnson and Silsbee (1985) [5] and the discovery of giant magnetoresistance independently by Albert Fert et al. [6] and Peter Grünberg et al. (1988). [7]
Molecular scale electronics, also called single-molecule electronics, is a branch of nanotechnology that uses single molecules, or nanoscale collections of single molecules, as electronic components. Because single molecules constitute the smallest stable structures possible, this miniaturization is the ultimate goal for shrinking electrical ...