Search results
Results From The WOW.Com Content Network
Band-bending diagram for p–n diode in forward bias. Diffusion drives carriers across the junction. Quasi-Fermi levels and carrier densities in forward biased p–n-diode. The figure assumes recombination is confined to the regions where majority carrier concentration is near the bulk values, which is not accurate when recombination-generation ...
Band diagram for p–n junction at equilibrium. The depletion region is shaded. φ B denotes band shift for holes and charges level. See P–n diode. The inner workings of a light emitting diode, showing circuit (top) and band diagram when a bias voltage is applied (bottom).
The p-n diode is a device that allows current to flow in only one direction as long as the applied voltage is below a certain threshold. When a forward bias is applied to the p-n junction of the diode the band gap in the depletion region is narrowed. The applied voltage introduces more charge carriers as well, which are able to diffuse across ...
The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact. [1] (In contrast, a rectifying semiconductor–semiconductor junction, the most common semiconductor device today, is known as a p–n junction.)
Holes in a P-side region near to the interface are also gone by a similar reason. As a result, majority charge carriers (free electrons for the N-type semiconductor, and holes for the P-type semiconductor) are depleted in the region around the junction interface, so this region is called the depletion region or depletion zone. Due to the ...
p–n junctions represent the simplest case of a semiconductor electronic device; a p-n junction by itself, when connected on both sides to a circuit, is a diode. More complex circuit components can be created by further combinations of p-type and n-type semiconductors; for example, the bipolar junction transistor (BJT) is a semiconductor in ...
The I-V curve for a diode showing avalanche and Zener breakdown.. In electronics, the Zener effect (employed most notably in the appropriately named Zener diode) is a type of electrical breakdown, discovered by Clarence Melvin Zener.
A homojunction PN junction.The band at the interface is continuous. In forward bias mode, the depletion width decreases. Both p and n junctions are doped at a 1e15/cm3 doping level, leading to built-in potential of ~0.59 V. Observe the different Quasi Fermi levels for conduction band and valence band in n and p regions (red curves).