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A 64 bit memory chip die, the SP95 Phase 2 buffer memory produced at IBM mid-1960s, versus memory core iron rings 8GB DDR3 RAM stick with a white heatsink. Random-access memory (RAM; / r æ m /) is a form of electronic computer memory that can be read and changed in any order, typically used to store working data and machine code.
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The static qualifier differentiates SRAM from dynamic random-access memory (DRAM):
Dynamic Random Access Memory or (RAM) was first invented in 1968 by Robert Dennard. [2] He was born in Texas and is an engineer who created one of the first models of (RAM) which was first called Dynamic Random Access Memory. His invention led to computers being able to reach a new era of technological advancement.
The term memory is often synonymous with the terms RAM, main memory, or primary storage. Archaic synonyms for main memory include core (for magnetic core memory) and store. [3] Main memory operates at a high speed compared to mass storage which is slower but less expensive per bit and higher in capacity.
February — Tohoku University and Hitachi developed a prototype 2-Mbit non-volatile RAM chip employing spin-transfer torque switching. [36] August — "IBM, TDK Partner In Magnetic Memory Research on Spin Transfer Torque Switching" IBM and TDK to lower the cost and boost performance of MRAM to hopefully release a product to market. [37]