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Charge carrier density, also known as carrier concentration, denotes the number of charge carriers per volume. In SI units, it is measured in m −3. As with any density, in principle it can depend on position. However, usually carrier concentration is given as a single number, and represents the average carrier density over the whole material.
A calibration curve plot showing limit of detection (LOD), limit of quantification (LOQ), dynamic range, and limit of linearity (LOL).. In analytical chemistry, a calibration curve, also known as a standard curve, is a general method for determining the concentration of a substance in an unknown sample by comparing the unknown to a set of standard samples of known concentration. [1]
Mass transfer coefficients can be estimated from many different theoretical equations, correlations, and analogies that are functions of material properties, intensive properties and flow regime (laminar or turbulent flow). Selection of the most applicable model is dependent on the materials and the system, or environment, being studied.
Specific activity (symbol a) is the activity per unit mass of a radionuclide and is a physical property of that radionuclide. [1] [2] It is usually given in units of becquerel per kilogram (Bq/kg), but another commonly used unit of specific activity is the curie per gram (Ci/g).
C A is the analytical concentration of the acid and C H is the concentration the hydrogen ion that has been added to the solution. The self-dissociation of water is ignored. A quantity in square brackets, [X], represents the concentration of the chemical substance X. It is understood that the symbol H + stands for the hydrated hydronium ion.
The equation can only be applied when the purged volume of vapor or gas is replaced with "clean" air or gas. For example, the equation can be used to calculate the time required at a certain ventilation rate to reduce a high carbon monoxide concentration in a room.
Fractionation at total reflux. The Fenske equation in continuous fractional distillation is an equation used for calculating the minimum number of theoretical plates required for the separation of a binary feed stream by a fractionation column that is being operated at total reflux (i.e., which means that no overhead product distillate is being withdrawn from the column).
With increasing temperature, phonon concentration increases and causes increased scattering. Thus lattice scattering lowers the carrier mobility more and more at higher temperature. Theoretical calculations reveal that the mobility in non-polar semiconductors, such as silicon and germanium, is dominated by acoustic phonon interaction.