Search results
Results From The WOW.Com Content Network
Resistivity is commonly represented by the Greek letter ρ . The SI unit of electrical resistivity is the ohm-metre (Ω⋅m). [1] [2] [3] For example, if a 1 m 3 solid cube of material has sheet contacts on two opposite faces, and the resistance between these contacts is 1 Ω, then the resistivity of the material is 1 Ω⋅m.
In general, the resistivity of a material exists because an electron, while moving inside a medium, is scattered by impurities, defects, thermal fluctuations of ions in a crystalline solid, or, generally, by any freely-moving atom/molecule composing a gas or liquid.
The thermal conductivity of a material is a measure of its ability to conduct heat.It is commonly denoted by , , or and is measured in W·m −1 ·K −1.. Heat transfer occurs at a lower rate in materials of low thermal conductivity than in materials of high thermal conductivity.
Quantity (common name/s) (Common) symbol/s Defining equation SI unit Dimension Temperature gradient: No standard symbol K⋅m −1: ΘL −1: Thermal conduction rate, thermal current, thermal/heat flux, thermal power transfer
Example Consider a component such as a silicon transistor that is bolted to the metal frame of a piece of equipment. The transistor's manufacturer will specify parameters in the datasheet called the absolute thermal resistance from junction to case (symbol: R θ J C {\displaystyle R_{\theta {\rm {JC}}}} ), and the maximum allowable temperature ...
The specific resistivity is the inverse of the conductivity. Both parameters will be used in the following. ... is the average speed of the particles in the gas.
Since resistivity usually increases as defect prevalence increases, a large RRR is associated with a pure sample. RRR is also important for characterizing certain unusual low temperature states such as the Kondo effect and superconductivity. Note that since it is a unitless ratio there is no difference between a residual resistivity and ...
For example, the value of v sat is on the order of 1×10 7 cm/s for both electrons and holes in Si. It is on the order of 6×10 6 cm/s for Ge. This velocity is a characteristic of the material and a strong function of doping or impurity levels and temperature. It is one of the key material and semiconductor device properties that determine a ...