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Plasma etching is currently used to process semiconducting materials for their use in the fabrication of electronics. Small features can be etched into the surface of the semiconducting material in order to be more efficient or enhance certain properties when used in electronic devices. [ 3 ]
The plasma produces energetic free radicals, neutrally charged, that react at the surface of the wafer. Since neutral particles attack the wafer from all angles, this process is isotropic. Plasma etching can be isotropic, i.e., exhibiting a lateral undercut rate on a patterned surface approximately the same as its downward etch rate, or can be ...
Reactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching. RIE uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure by an electromagnetic field.
A number of adhesion promotion methods have been developed to enhance PTFE bond strength. The primary methods currently used in industry are sodium etching and plasma etching. Results of ion beam treatment and laser surface roughening have also been reported in the literature, but do not have a significant presence as commercial processes.
DRIE of glass requires high plasma power, which makes it difficult to find suitable mask materials for truly deep etching. Polysilicon and nickel are used for 10–50 μm etched depths. In DRIE of polymers, Bosch process with alternating steps of SF 6 etching and C 4 F 8 passivation take place.
Typically, monatomic oxygen plasma is created by exposing oxygen gas (O 2) at a low pressure to high power radio waves, which ionise it. This process is done under vacuum in order to create a plasma. As the plasma is formed, many free radicals and also oxygen ions are created. These ions could damage the wafer due to the electric field build up ...