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A modern computerised nitriding furnace. Nitriding is a heat treating process that diffuses nitrogen into the surface of a metal to create a case-hardened surface. These processes are most commonly used on low-alloy steels. They are also used on titanium, aluminium and molybdenum.
Despite the naming, the process is a modified form of nitriding and not carburizing. The shared attribute of this class of this process is the introduction of nitrogen and carbon in the ferritic state of the material. The processes are divided into four main classes: gaseous, salt bath, ion or plasma, or fluidized-bed. The trade name and ...
Gallium nitride (Ga N) is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure .
The nitride anion, N 3-ion, is very elusive but compounds of nitride are numerous, although rarely naturally occurring. Some nitrides have a found applications, [1] such as wear-resistant coatings (e.g., titanium nitride, TiN), hard ceramic materials (e.g., silicon nitride, Si 3 N 4), and semiconductors (e.g., gallium nitride, GaN).
Nitride chlorides may be produced by heating metal nitrides with metal chlorides. The ammonolysis process heats a metal chloride with ammonia. [3] A related method heats a metal or metal hydride with ammonium chloride. The nitrogen source could also be an azide or an amide. [3]
For instance, carbon tetrachloride (CCl 4) etches silicon and aluminium, and trifluoromethane etches silicon dioxide and silicon nitride. A plasma containing oxygen is used to oxidize ("ash") photoresist and facilitate its removal. Ion milling, or sputter etching, uses lower pressures, often as low as 10 −4 Torr (10 mPa).
Aluminium nitride (Al N) is a solid nitride of aluminium. It has a high thermal conductivity of up to 321 W/(m·K) [ 5 ] and is an electrical insulator. Its wurtzite phase (w-AlN) has a band gap of ~6 eV at room temperature and has a potential application in optoelectronics operating at deep ultraviolet frequencies.
Silicon nitride is often used as an insulator and chemical barrier in manufacturing ICs. The following two reactions deposit silicon nitride from the gas phase: 3 SiH 4 + 4 NH 3 → Si 3 N 4 + 12 H 2 3 SiCl 2 H 2 + 4 NH 3 → Si 3 N 4 + 6 HCl + 6 H 2. Silicon nitride deposited by LPCVD contains up to 8% hydrogen.