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The first practical form of random-access memory was the Williams tube. It stored data as electrically charged spots on the face of a cathode-ray tube. Since the electron beam of the CRT could read and write the spots on the tube in any order, memory was random access.
In computer science, random-access machine (RAM or RA-machine) is a model of computation that describes an abstract machine in the general class of register machines.The RA-machine is very similar to the counter machine but with the added capability of 'indirect addressing' of its registers.
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
Random access compared to sequential access. Random access (also called direct access) is the ability to access an arbitrary element of a sequence in equal time or any datum from a population of addressable elements roughly as easily and efficiently as any other, no matter how many elements may be in the set.
Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The static qualifier differentiates SRAM from dynamic random-access memory (DRAM):
The "RAM" part of the real RAM model name stands for "random-access machine". This is a model of computing that resembles a simplified version of a standard computer architecture. It consists of a stored program, a computer memory unit consisting of an array of cells, and a central processing unit with a bounded number of registers. Each memory ...
They can store more information and transmit data more quickly than the older technology, called DRAM (dynamic random access memory). HBM chips are commonly used in graphic cards, high-performance ...
Row access is the heart of a read operation, as it involves the careful sensing of the tiny signals in DRAM memory cells; it is the slowest phase of memory operation. However, once a row is read, subsequent column accesses to that same row can be very quick, as the sense amplifiers also act as latches.