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The structure of the silicon APD. An avalanche photodiode (APD) is a highly sensitive type of photodiode, which in general are semiconductor diodes that convert light into electricity via interband excitation coupled with impact ionization.
In electronics, an avalanche diode is a diode (made from silicon or other semiconductor) that is designed to experience avalanche breakdown at a specified reverse bias voltage. The junction of an avalanche diode is designed to prevent current concentration and resulting hot spots, so that the diode is undamaged by the breakdown.
Commercial single-photon avalanche diode module for optical photons. A single-photon avalanche diode (SPAD), also called Geiger-mode avalanche photodiode [1] (G-APD or GM-APD [2]) is a solid-state photodetector within the same family as photodiodes and avalanche photodiodes (APDs), while also being fundamentally linked with basic diode behaviours.
Avalanche photodiodes are photodiodes with structure optimized for operating with high reverse bias, approaching the reverse breakdown voltage. This allows each photo-generated carrier to be multiplied by avalanche breakdown , resulting in internal gain within the photodiode, which increases the effective responsivity of the device.
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Created Date: 8/30/2012 4:52:52 PM
In an avalanche photodiode the original charge carrier is created by the absorption of a photon. The impact ionization process is used in modern cosmic dust detectors like the Galileo Dust Detector [ 2 ] and dust analyzers Cassini CDA , [ 3 ] Stardust CIDA and the Surface Dust Analyser [ 4 ] for the identification of dust impacts and the ...
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