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Measuring ESR can be done by applying an alternating voltage at a frequency at which the capacitor's reactance is negligible, in a voltage divider configuration. It is easy to check ESR well enough for troubleshooting by using an improvised ESR meter comprising a simple square-wave generator and oscilloscope, or a sinewave generator of a few tens of kilohertz and an AC voltmeter, using a known ...
In this type the resistance varies with the applied voltage or current. Negative resistance vs positive resistance: If the I–V curve has a positive slope (increasing to the right) throughout, it represents a positive resistance. An I–V curve that is nonmonotonic (having peaks and valleys) represents a device which has negative resistance.
One is its internal resistance and the other is its compliance voltage. The compliance voltage is the maximum voltage that the current source can supply to a load. Over a given load range, it is possible for some types of real current sources to exhibit nearly infinite internal resistance.
Internal resistance varies with the age of a battery, but for most commercial batteries the internal resistance is on the order of 1 ohm. When there is a current through a cell, the measured e.m.f. is lower than when there is no current delivered by the cell.
As channel length decreases, the barrier φ B to be surmounted by an electron from the source on its way to the drain reduces. Drain-induced barrier lowering (DIBL) is a short-channel effect in MOSFETs referring originally to a reduction of threshold voltage of the transistor at higher drain voltages.
In practice, the internal resistance of a battery is dependent on its size, state of charge, chemical properties, age, temperature, and the discharge current. It has an electronic component due to the resistivity of the component materials and an ionic component due to electrochemical factors such as electrolyte conductivity , ion mobility ...
For NPN open collector outputs, the emitter of the NPN transistor is internally connected to ground, [1] so the NPN open collector internally forms either a short-circuit (technically low impedance or "low-Z") connection to the low voltage (which could be ground) when the transistor is switched on, or an open-circuit (technically high impedance ...
The role of the base resistor is to expand the very small transistor input voltage range (about 0.7 V) to the logical "1" level (about 3.5 V) by converting the input voltage into current. Its resistance is settled by a compromise: it is chosen low enough to saturate the transistor and high enough to obtain high input resistance.