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  2. Negative-bias temperature instability - Wikipedia

    en.wikipedia.org/wiki/Negative-bias_temperature...

    With the introduction of high κ metal gates, a new degradation mechanism has become more important, referred to as PBTI (for positive bias temperature instabilities), which affects nMOS transistor when positively biased. In this case, no interface states are generated and 100% of the Vth degradation may be recovered.

  3. Very-large-scale integration - Wikipedia

    en.wikipedia.org/wiki/Very-large-scale_integration

    Very-large-scale integration (VLSI) is the process of creating an integrated circuit (IC) by combining millions or billions of MOS transistors onto a single chip. VLSI began in the 1970s when MOS integrated circuit (metal oxide semiconductor) chips were developed and then widely adopted, enabling complex semiconductor and telecommunications technologies.

  4. Shallow trench isolation - Wikipedia

    en.wikipedia.org/wiki/Shallow_trench_isolation

    Scaling of isolation with transistor size. Isolation pitch is the sum of the transistor width and the trench isolation distance. As the isolation pitch shrinks, the narrow channel width effect becomes more apparent.

  5. VLSI Project - Wikipedia

    en.wikipedia.org/wiki/VLSI_Project

    The VLSI Project was a DARPA-program initiated by Robert Kahn in 1978 [1] that provided research funding to a wide variety of university-based teams in an effort to improve the state of the art in microprocessor design, then known as Very Large Scale Integration (VLSI).

  6. Mead–Conway VLSI chip design revolution - Wikipedia

    en.wikipedia.org/wiki/Mead–Conway_VLSI_chip...

    The Mead–Conway VLSI chip design revolution, or Mead and Conway revolution, was a very-large-scale integration design revolution starting in 1978 which resulted in a worldwide restructuring of academic materials in computer science and electrical engineering education, and was paramount for the development of industries based on the application of microelectronics.

  7. Drain-induced barrier lowering - Wikipedia

    en.wikipedia.org/wiki/Drain-induced_barrier_lowering

    As channel length decreases, the barrier φ B to be surmounted by an electron from the source on its way to the drain reduces. Drain-induced barrier lowering (DIBL) is a short-channel effect in MOSFETs referring originally to a reduction of threshold voltage of the transistor at higher drain voltages.

  8. What type of pen does Donald Trump use? Here's how he signs ...

    www.aol.com/type-pen-does-donald-trump-183826477...

    U.S. President Donald Trump signs documents as he issues executive orders and pardons for January 6 defendants in the Oval Office at the White House on Inauguration Day in Washington, U.S ...

  9. GDSII - Wikipedia

    en.wikipedia.org/wiki/GDSII

    Computer Aids for VLSI Design - Appendix C: GDS II Format by Steven M. Rubin // Addison-Wesley, 1987; The GDSII Stream Format Archived 2016-06-16 at the Wayback Machine by Jim R. Buchanan, 6/11/96; GDS II Graphic Design System User's Operating Manual, First Edition 1978 // Calma Interactive Graphic Systems, November 1978. Retrieved Apr 21, 2020.