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Piranha solution is used frequently in the microelectronics industry, e.g. to clean photoresist or organic material residue from silicon wafers. It is also widely employed in wet etching of wafers in the semiconductor fabrication process .
The RCA clean is a standard set of wafer cleaning steps which need to be performed before high-temperature processing steps (oxidation, diffusion, CVD) of silicon wafers in semiconductor manufacturing. Werner Kern developed the basic procedure in 1965 while working for RCA, the Radio Corporation of America.
Etching tanks used to perform Piranha, hydrofluoric acid or RCA clean on 4-inch wafer batches at LAAS technological facility in Toulouse, France. Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module in fabrication, and every wafer ...
Cleaning by solvents such as acetone, trichloroethylene or ultrapure water sometimes while spinning the wafer; Piranha solution; RCA clean; Wafer scrubbing; Spin cleaning [119] Jet spray cleaning [119] Cryogenic aerosol [120] Megasonics [121] Immersion batch cleaning [122] Surface passivation; Photolithography. Photoresist coating (often as a ...
RCA-1 clean in ammonia-peroxide solution removes organic contamination and particles; RCA-2 cleaning in hydrogen chloride-peroxide mixture removes metallic impurities. Sulfuric acid-peroxide mixture (a.k.a. Piranha) removes organics. Hydrogen fluoride removes native oxide from silicon surface. These are all wet cleaning steps in solutions.
Piranha solution in particular constitutes quite a harsh treatment that can potentially damage the integrity of the silicon surface. Finlayson-Pitts et al. investigated the effect of certain treatments on silicon and concluded that both the roughness (3-5 Å) and the presence of scattered large particles were preserved after 1 cycle of plasma ...
The silicon wafers start out blank and pure. The circuits are built in layers in clean rooms. First, photoresist patterns are photo-masked in micrometer detail onto the wafers' surface. The wafers are then exposed to short-wave ultraviolet light and the unexposed areas are thus etched away and cleaned.
The wafer platter is electrically isolated from the rest of the chamber. Gas enters through small inlets in the top of the chamber, and exits to the vacuum pump system through the bottom. The types and amount of gas used vary depending upon the etch process; for instance, sulfur hexafluoride is commonly used for etching silicon.