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MOSFET, showing gate (G), body (B), source (S), and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).. The MOSFET (metal–oxide–semiconductor field-effect transistor) [1] is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon.
A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in
Just as applications of electronics have expanded dramatically since the first transistor was invented in 1948, the unique applications of photonics continue to emerge. Economically important applications for semiconductor photonic devices include optical data recording, fiber optic telecommunications, laser printing (based on xerography ...
The first practical application of semiconductors in electronics was the 1904 development of the cat's-whisker detector, a primitive semiconductor diode used in early radio receivers. Developments in quantum physics led in turn to the invention of the transistor in 1947 [ 7 ] and the integrated circuit in 1958.
Very-large-scale integration (VLSI) is the process of creating an integrated circuit (IC) by combining millions or billions of MOS transistors onto a single chip. VLSI began in the 1970s when MOS integrated circuit (metal oxide semiconductor) chips were developed and then widely adopted, enabling complex semiconductor and telecommunications technologies.
An early example of a MEMS device is the resonant-gate transistor, an adaptation of the MOSFET, developed by Robert A. Wickstrom for Harvey C. Nathanson in 1965. [4] Another early example is the resonistor, an electromechanical monolithic resonator patented by Raymond J. Wilfinger between 1966 and 1971.
Solid tantalums have an additional issue which must be addressed during the design stage. Solid tantalum capacitors must be voltage derated in all applications. A 50% voltage derating is recommended and generally accepted as the industry standard; e.g. a 50V solid tantalum capacitor should never be exposed to an actual application voltage above ...
Thanks to the rapid heating, only a thin surface layer of the material is heated. Applications include hardening, annealing, tempering, texturing, and polishing (with argon gas present). If the electron beam is used to cut a shallow trough in the surface, repeatedly moving it horizontally along the trough at high speeds creates a small pile of ...