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Indium oxide is used in some types of batteries, thin film infrared reflectors transparent for visible light (hot mirrors), some optical coatings, and some antistatic coatings. In combination with tin dioxide, indium oxide forms indium tin oxide (also called tin doped indium oxide or ITO), a material used for transparent conductive coatings.
Indium tin oxide and indium phosphide harm the pulmonary and immune systems, predominantly through ionic indium, [91] though hydrated indium oxide is more than forty times as toxic when injected, measured by the quantity of indium introduced. [21] People can be exposed to indium in the workplace by inhalation, ingestion, skin contact, and eye ...
Indium tin oxide (ITO) is a ternary composition of indium, tin and oxygen in varying proportions. Depending on the oxygen content, it can be described as either a ceramic or an alloy . Indium tin oxide is typically encountered as an oxygen-saturated composition with a formulation of 74% In, 8% Sn, and 18% O by weight.
AZO is composed of aluminum and zinc, two common and inexpensive materials, while indium-doped cadmium oxide only uses indium in low concentrations. Several transition metal dopants in indium oxide, particularly molybdenum, give much higher electron mobility and conductivity than obtained with tin [ 17 ] and Ta is a promising alternative dopant ...
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
Galinstan is a brand name for an alloy composed of gallium, indium, and tin which melts at −19 °C (−2 °F) and is thus liquid at room temperature. [4] [5] In scientific literature, galinstan is also used to denote the eutectic alloy of gallium, indium, and tin, which melts at around +11 °C (52 °F). [5]
Boron oxide (B 2 O 3) is slightly acidic, aluminium and gallium oxide (Al 2 O 3 and Ga 2 O 3 respectively) are amphoteric, indium(III) oxide (In 2 O 3) is nearly amphoteric, and thallium(III) oxide (Tl 2 O 3) is a Lewis base because it dissolves in acids to form salts. Each of these compounds are stable, but thallium oxide decomposes at ...
Indium(III) fluoride or indium trifluoride is the inorganic compound with the formula InF 3. It is a white solid. It has a rhombohedral crystal structure very similar to that of rhodium(III) fluoride. Each In center is octahedral. It is formed by the reaction of indium(III) oxide with hydrogen fluoride or hydrofluoric acid. [3]