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The first MOSFET (metal–oxide–semiconductor field-effect transistor) was made by Mohamed Atalla and Dawon Kahng at Bell Labs in 1959, and demonstrated in 1960. [1] They used silicon as channel material and a non-self-aligned aluminum gate. [2]
In the semiconductor at the smaller voltage shown in the top panel, the positive charge placed on the left face of the insulator lowers the energy of the valence band edge. Consequently, these states are fully occupied out to a so-called depletion depth where the bulk occupancy reestablishes itself because the field cannot penetrate further.
In semiconductor electronics fabrication technology, a self-aligned gate is a transistor manufacturing approach whereby the gate electrode of a MOSFET (metal–oxide–semiconductor field-effect transistor) is used as a mask for the doping of the source and drain regions. This technique ensures that the gate is naturally and precisely aligned ...
The greater the positive charge placed on the gate, the more positive the applied gate voltage, and the more holes that leave the semiconductor surface, enlarging the depletion region. (In this device there is a limit to how wide the depletion width may become.
An N-MOSFET/IGBT needs a significantly positive charge (V GS > V th) applied to the gate in order to turn on. Using only N-channel MOSFET/IGBT devices is a common cost reduction method due largely to die size reduction (there are other benefits as well). However, using nMOS devices in place of pMOS devices means that a voltage higher than the ...
This can be the gate material, the location of the gate with respect to the channel, how the gate is isolated from the channel, and what type of carrier is induced by the gate voltage into channel (such as electrons in an n-channel device, holes in a p-channel device, and both electrons and holes in a double injection device). Figure 1.