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The parasitic capacitance between the turns of an inductor (e.g. Figure 1) or other wound component is often described as self-capacitance. However, in electromagnetics, the term self-capacitance more correctly refers to a different phenomenon: the capacitance of a conductive object without reference to another object.
Lower parasitic capacitance due to isolation from the bulk silicon, which improves power consumption at matched performance; Resistance to latchup due to complete isolation of the n- and p-well structures; Higher performance at equivalent VDD. Can work at low VDDs [5] Reduced temperature dependency due to no doping
The Miller capacitance due to undesired parasitic capacitance between the output and input of active devices like transistors and vacuum tubes is a major factor limiting their gain at high frequencies.
Interconnect capacitance is calculated by giving the extraction tool the following information: the top view layout of the design in the form of input polygons on a set of layers; a mapping to a set of devices and pins (from a Layout Versus Schematic run), and a cross sectional understanding of these layers. This information is used to create a ...
Replacing the silicon dioxide with a low-κ dielectric of the same thickness reduces parasitic capacitance, enabling faster switching speeds (in case of synchronous circuits) and lower heat dissipation. In conversation such materials may be referred to as "low-k" (spoken "low-kay") rather than "low-κ" (low-kappa).
In electrical networks, a parasitic impedance is a circuit element (resistance, inductance or capacitance) which is not desirable in an electrical component for its intended purpose. For instance, a resistor is designed to possess resistance, but will also possess unwanted parasitic capacitance. Parasitic impedances are unavoidable.
CMOS inverters along the critical path are typically designed with a gamma equal to 2. In other words, the pFET of the inverter is designed with twice the width (and therefore twice the capacitance) as the nFET of the inverter, in order to get roughly the same pFET resistance as nFET resistance, in order to get roughly equal pull-up current and pull-down current.
To reduce the delay penalty caused by parasitic capacitance, the dielectric material used to insulate adjacent interconnects, and interconnects on different levels (the inter-level dielectric [ILD]), should have a dielectric constant that is as close to 1 as possible.