Ads
related to: finfet transistors
Search results
Results From The WOW.Com Content Network
A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.
FinFET (fin field-effect transistor) is a type of non-planar transistor, or "3D" transistor (not to be confused with 3D microchips). [8] The FinFET is a variation on traditional MOSFETs distinguished by the presence of a thin silicon "fin" inversion channel on top of the substrate, allowing the gate to make two points of contact: the left and ...
FinFET: Digh Hisamoto, Toru Kaga, Yoshifumi Kawamoto, Eiji Takeda Hitachi Central Research Laboratory [57] [58] [59] December 1998: 17 nm: FinFET Digh Hisamoto, Chenming Hu, Tsu-Jae King Liu, Jeffrey Bokor: University of California (Berkeley) [60] [61] 2001 15 nm: FinFET Chenming Hu, Yang-Kyu Choi, Nick Lindert, Tsu-Jae King Liu: University of ...
In semiconductor manufacturing, the 2 nm process is the next MOSFET (metal–oxide–semiconductor field-effect transistor) die shrink after the 3 nm process node.. The term "2 nanometer", or alternatively "20 angstrom" (a term used by Intel), has no relation to any actual physical feature (such as gate length, metal pitch or gate pitch) of the transistors.
At IEDM 2013, a premier conference at which the latest semiconductor technologies are often revealed, Taiwan Semiconductor finally detailed its next-generation 16-nanometer FinFET semiconductor ...
It is based on FinFET (fin field-effect transistor) technology, a type of multi-gate MOSFET technology. As of 2021, the IRDS Lithography standard gives a table of dimensions for the "7 nm" node, [1] with examples given below: