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  2. 2N3904 - Wikipedia

    en.wikipedia.org/wiki/2N3904

    The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications. [1] [2] [3] It is designed for low current and power, medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3906 PNP transistor. Both types were registered by Motorola Semiconductor in ...

  3. 2N3055 - Wikipedia

    en.wikipedia.org/wiki/2N3055

    The 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s. [1]

  4. BC108 family - Wikipedia

    en.wikipedia.org/wiki/BC108_family

    BC108 family transistors from various manufacturers (ITT, CEMI, SGS-ATES, Siemens)The BC107, BC108 and BC109 are general-purpose low power silicon NPN bipolar junction transistors found very often in equipment and electronics books/articles from Europe, Australia [1] and many other countries from the 1960s.

  5. 2N107 - Wikipedia

    en.wikipedia.org/wiki/2N107

    The 2N170 was priced slightly higher than the 2N107. The 2N170 was a fallout from the 2N167, 2N168 and 2N169 transistor lines. In the 1950s, General Electric distinguished their PNP and NPN transistors by their case styles. PNP transistors had the round, black "top hat" style body, while NPN transistors had oval, black "top hats".

  6. 2N2222 - Wikipedia

    en.wikipedia.org/wiki/2N2222

    NPN silicon transistors with similar properties are also made in a variety of small through-hole and surface mount packages including TO-92, SOT-23, and SOT-223. Replacements for the 2N2222 are commonly available in the cheaper TO-92 packaging, where it is known as the PN2222 or P2N2222, which has similar specifications except for the lower ...

  7. Bipolar junction transistor - Wikipedia

    en.wikipedia.org/wiki/Bipolar_junction_transistor

    Ebers–Moll model for an NPN transistor. [28] I B, I C and I E are the base, collector and emitter currents; I CD and I ED are the collector and emitter diode currents; α F and α R are the forward and reverse common-base current gains. Ebers–Moll model for a PNP transistor Approximated Ebers–Moll model for an NPN transistor in the ...