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A low-noise amplifier (LNA) is an electronic component that amplifies a very low-power signal without significantly degrading its signal-to-noise ratio (SNR). Any electronic amplifier will increase the power of both the signal and the noise present at its input, but the amplifier will also introduce some additional noise.
In a photodiode array, pixels contain a p–n junction, integrated capacitor, and MOSFETs as selection transistors. A photodiode array was proposed by G. Weckler in 1968, predating the CCD. [25] This was the basis for the PPS. [20] The noise of photodiode arrays is sometimes a limitation to
The noise power from a simple load is equal to kTB, where k is the Boltzmann constant, T is the absolute temperature of the load (for example a resistor), and B is the measurement bandwidth. This makes the noise figure a useful figure of merit for terrestrial systems, where the antenna effective temperature is usually near the standard 290 K ...
The static induction transistor (SIT) is a type of field-effect transistor (FET) capable of high-speed and high-power operation, with low distortion and low noise. [1] It is a vertical structure device with short multichannel. The device was originally known as a VFET, with V being short for vertical. [2]
Different types of noise are generated by different devices and different processes. Thermal noise is unavoidable at non-zero temperature (see fluctuation-dissipation theorem), while other types depend mostly on device type (such as shot noise, [1] [3] which needs a steep potential barrier) or manufacturing quality and semiconductor defects, such as conductance fluctuations, including 1/f noise.
BC108 family transistors from various manufacturers (ITT, CEMI, SGS-ATES, Siemens) The BC107 , BC108 and BC109 are general-purpose low power silicon NPN bipolar junction transistors found very often in equipment and electronics books/articles from Europe, Australia [ 1 ] and many other countries from the 1960s.