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Molecular-beam epitaxy takes place in high vacuum or ultra-high vacuum (10 −8 –10 −12 Torr).The most important aspect of an MBE process is the deposition rate (typically less than 3,000 nm per hour) that allows the films to grow epitaxially (in layers on top of the existing crystal).
Molecular beams are useful for fabricating thin films in molecular beam epitaxy and artificial structures such as quantum wells, quantum wires, and quantum dots. Molecular beams have also been applied as crossed molecular beams. The molecules in the molecular beam can be manipulated by electrical fields and magnetic fields. [1]
A common technique used in compound semiconductor growth is molecular beam epitaxy (MBE). In this method, a source material is heated to produce an evaporated beam of particles, which travel through a very high vacuum (10 −8 Pa; practically free space) to the substrate and start epitaxial growth.
He is known as the "father of molecular beam epitaxy"; a technique he developed at that facility in the late 1960s. He is also the co-inventor, with Federico Capasso of quantum cascade lasers at Bell Labs in 1994.
John R. Arthur Jr. is an American materials scientist best known as a pioneer of molecular beam epitaxy. Together with Alfred Y. Cho, Arthur pioneered molecular beam epitaxy at Bell Laboratories, where he published a paper in July 1968 that described construction of epitaxial gallium arsenide layers using molecular beam epitaxy.
Chemical beam epitaxy (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III-V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular beams of reactive gases, typically as the hydride or a metalorganic. The term ...
Molecular-beam epitaxy is a technique used to construct thin epitaxial films of materials ranging from oxides to semiconductors to metals. Different beams of atoms and molecules in an ultra-high vacuum environment are shot onto a nearly atomically clean crystal, creating a layering effect. This is a type of thin-film deposition. Semiconductors ...
The Knudsen cell is used to measure the vapor pressures of a solid with very low vapor pressure. Such a solid forms a vapor at low pressure by sublimation.The vapor slowly effuses through the pinhole, and the loss of mass is proportional to the vapor pressure and can be used to determine this pressure. [1]