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The optional second step (for bare silicon wafers) is a short immersion in a 1:100 or 1:50 solution of aqueous HF (hydrofluoric acid) at 25 °C for about fifteen seconds, in order to remove the thin oxide layer and some fraction of ionic contaminants. If this step is performed without ultra high purity materials and ultra clean containers, it ...
Linear potential sweep. In analytical chemistry, linear sweep voltammetry is a method of voltammetry where the current at a working electrode is measured while the potential between the working electrode and a reference electrode is swept linearly in time.
Layer-by-layer (LbL) deposition is a thin film fabrication technique. The films are formed by depositing alternating layers of complementary materials with wash steps in between. This can be accomplished by using various techniques such as immersion, spin, spray, electromagnetism, or fluidics. [1]
Atomic-layer CVD – Deposits successive layers of different substances to produce layered, crystalline films. See Atomic layer epitaxy. Combustion chemical vapor deposition (CCVD) – Combustion Chemical Vapor Deposition or flame pyrolysis is an open-atmosphere, flame-based technique for depositing high-quality thin films and nanomaterials.
Typical sizes are between 30 mL and 3 L. In industrial chemistry they can be much larger and for much larger volumes centrifuges are used. The sloping sides are designed to facilitate the identification of the layers. The tap-controlled outlet is designed to drain the liquid out of the funnel.
Thin-layer chromatography (TLC) is a chromatography technique that separates components in non-volatile mixtures. [1] It is performed on a TLC plate made up of a non-reactive solid coated with a thin layer of adsorbent material. [2] This is called the stationary phase. [2]
Synthesis of an amide with work-up step in red. A concentrated solution of sodium bicarbonate is added to the reaction mixture. This will promote the migration of impurities and byproducts to the aqueous layer and leave the product in the dichloromethane (organic layer). The aqueous and organic layers are allowed to separate.
Illustration of FEOL (device generation in the silicon, bottom) and BEOL (depositing metalization layers, middle part) to connect the devices. CMOS fabrication process. The front end of line (FEOL) is the first portion of IC fabrication where the individual components (transistors, capacitors, resistors, etc.) are patterned in a semiconductor substrate. [1]