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A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators.
The semiconductor materials used in electronic devices are doped under precise conditions to control the concentration and regions of p- and n-type dopants. A single semiconductor device crystal can have many p- and n-type regions; the p–n junctions between these regions are responsible for the useful electronic behavior.
F 2 is used as a measurement of area for different parts of a semiconductor device, based on the feature size of a semiconductor manufacturing process. Many semiconductor devices are designed in sections called cells, and each cell represents a small part of the device such as a memory cell to store data.
A challenge most critical to analog IC design involves the variability of the individual devices built on the semiconductor chip. Unlike board-level circuit design which permits the designer to select devices that have each been tested and binned according to value, the device values on an IC can vary widely which are uncontrollable by the ...
The term solid-state became popular at the beginning of the semiconductor era in the 1960s to distinguish this new technology. A semiconductor device works by controlling an electric current consisting of electrons or holes moving within a solid crystalline piece of semiconducting material such as silicon, while the thermionic vacuum tubes it replaced worked by controlling a current of ...
The semiconductor industry is the aggregate of companies engaged in the design and fabrication of semiconductors and semiconductor devices, such as transistors and integrated circuits. Its roots can be traced to the invention of the transistor by Shockley , Brattain , and Bardeen at Bell Labs in 1948.
Technology files and design rules are essential building blocks of the integrated circuit design process. Their accuracy and robustness over process technology, its variability and the operating conditions of the IC—environmental, parasitic interactions and testing, including adverse conditions such as electro-static discharge—are critical in determining performance, yield and reliability.
Nanoelectronic devices have critical dimensions with a size range between 1 nm and 100 nm. [1] Recent silicon MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor) technology generations are already within this regime, including 22 nanometers CMOS (complementary MOS) nodes and succeeding 14 nm , 10 nm and 7 nm FinFET ...