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Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. [1] [2] For most technological applications, single-domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an ...
Windows Subsystem for Linux (WSL) is a feature of Microsoft Windows that allows the use of a GNU/Linux environment from within Windows, foregoing the overhead of a virtual machine and being an alternative to dual booting.
Solar cells, or photovoltaic cells (PV) for producing electric power from sunlight can be grown as thick epi wafers on a monocrystalline silicon "seed" wafer by chemical vapor deposition (CVD), and then detached as self-supporting wafers of some standard thickness (e.g., 250 μm) that can be manipulated by hand, and directly substituted for wafer cells cut from monocrystalline silicon ingots.
Pendeo-epitaxy is mainly performed from the vapor phase via MOCVD and HVPE, and initially is used for growing gallium nitride (GaN) microelectronic device structures. In the case of GaN material system, LEO and PE technology was initiated in the late nineties and early 2000s in Prof. R.F. Davis group at NCSU.
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Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices , including transistors . [ 1 ] MBE is used to make diodes and MOSFETs (MOS field-effect transistors ) at microwave frequencies, and to manufacture the lasers used to read optical discs ...
One type of reactor used to carry out MOCVD is a cold-wall reactor. In a cold-wall reactor, the substrate is supported by a pedestal, which also acts as a susceptor. The pedestal/susceptor is the primary origin of heat energy in the reaction chamber. Only the susceptor is heated, so gases do not react before they reach the hot wafer surface.
Hydride vapour-phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their related compounds, in which hydrogen chloride is reacted at elevated temperature with the group-III metals to produce gaseous metal chlorides, which then react with ammonia to produce the group-III nitrides.