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Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. [1] [2] For most technological applications, single-domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an ...
Solar cells, or photovoltaic cells (PV) for producing electric power from sunlight can be grown as thick epi wafers on a monocrystalline silicon "seed" wafer by chemical vapor deposition (CVD), and then detached as self-supporting wafers of some standard thickness (e.g., 250 μm) that can be manipulated by hand, and directly substituted for wafer cells cut from monocrystalline silicon ingots.
Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices , including transistors . [ 1 ] MBE is used to make diodes and MOSFETs (MOS field-effect transistors ) at microwave frequencies, and to manufacture the lasers used to read optical discs ...
This is an accepted version of this page This is the latest accepted revision, reviewed on 3 March 2025. Family of Unix-like operating systems This article is about the family of operating systems. For the kernel, see Linux kernel. For other uses, see Linux (disambiguation). Operating system Linux Tux the penguin, the mascot of Linux Developer Community contributors, Linus Torvalds Written in ...
Hydride vapour-phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their related compounds, in which hydrogen chloride is reacted at elevated temperature with the group-III metals to produce gaseous metal chlorides, which then react with ammonia to produce the group-III nitrides.
One type of reactor used to carry out MOCVD is a cold-wall reactor. In a cold-wall reactor, the substrate is supported by a pedestal, which also acts as a susceptor. The pedestal/susceptor is the primary origin of heat energy in the reaction chamber. Only the susceptor is heated, so gases do not react before they reach the hot wafer surface.
Snap is a software packaging and deployment system developed by Canonical for operating systems that use the Linux kernel and the systemd init system. The packages, called snaps, and the tool for using them, snapd, work across a range of Linux distributions [3] and allow upstream software developers to distribute their applications directly to users.
Thermal laser epitaxy (TLE) is a physical vapor deposition technique that utilizes irradiation from continuous-wave lasers to heat sources locally for growing films on a substrate. [ 1 ] [ 2 ] This technique can be performed under ultra-high vacuum pressure or in the presence of a background atmosphere, such as ozone , to deposit oxide films.