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Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. [1] [2] For most technological applications, single-domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an ...
Solar cells, or photovoltaic cells (PV) for producing electric power from sunlight can be grown as thick epi wafers on a monocrystalline silicon "seed" wafer by chemical vapor deposition (CVD), and then detached as self-supporting wafers of some standard thickness (e.g., 250 μm) that can be manipulated by hand, and directly substituted for wafer cells cut from monocrystalline silicon ingots.
One getty process serves one terminal. In some systems, for example, Solaris , getty was replaced by ttymon . Personal computers running Unix-like operating systems , even if they do not provide any remote login services, may still use getty as a means of logging in on a local virtual console .
Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices , including transistors . [ 1 ] MBE is used to make diodes and MOSFETs (MOS field-effect transistors ) at microwave frequencies, and to manufacture the lasers used to read optical discs ...
Chemical beam epitaxy was first demonstrated by W.T. Tsang in 1984. [1] This technique was then described as a hybrid of metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) that exploited the advantages of both the techniques. In this initial work, InP and GaAs were grown using gaseous group III and V alkyls.
Selective area epitaxy is the local growth of epitaxial layer through a patterned amorphous dielectric mask (typically SiO 2 or Si 3 N 4) deposited on a semiconductor substrate. Semiconductor growth conditions are selected to ensure epitaxial growth on the exposed substrate, but not on the dielectric mask. [ 1 ]
Atomic layer epitaxy (ALE), [1] more generally known as atomic layer deposition (ALD), [2] is a specialized form of thin film growth that typically deposit alternating monolayers of two elements onto a substrate. The crystal lattice structure achieved is thin, uniform, and aligned with the structure of the substrate.
Thermal laser epitaxy (TLE) is a physical vapor deposition technique that utilizes irradiation from continuous-wave lasers to heat sources locally for growing films on a substrate. [ 1 ] [ 2 ] This technique can be performed under ultra-high vacuum pressure or in the presence of a background atmosphere, such as ozone , to deposit oxide films.