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direct/indirect: Tin sulfide (SnS) is a semiconductor with direct optical band gap of 1.3 eV and absorption coefficient above 10 4 cm −1 for photon energies above 1.3 eV. It is a p-type semiconductor whose electrical properties can be tailored by doping and structural modification and has emerged as one of the simple, non-toxic and affordable ...
In an "indirect" gap, a photon cannot be emitted because the electron must pass through an intermediate state and transfer momentum to the crystal lattice. Examples of direct bandgap materials include hydrogenated amorphous silicon and some III–V materials such as InAs and GaAs. Indirect bandgap materials include crystalline silicon and Ge ...
Unlike most I-III-VI 2 oxides, which are transparent, electrically insulating solids with a bandgap above 2 eV, β-CuGaO 2 has a direct bandgap of 1.47 eV, which is favorable for solar cell applications. In contrast, β-AgGaO 2 and β-AgAlO 2 have an indirect bandgap. Undoped β-CuGaO 2 is a p-type semiconductor. [2]
While bulk MoS 2 in the 2H-phase is known to be an indirect-band gap semiconductor, monolayer MoS 2 has a direct band gap. The layer-dependent optoelectronic properties of MoS 2 have promoted much research in 2-dimensional MoS 2 -based devices. 2D MoS 2 can be produced by exfoliating bulk crystals to produce single-layer to few-layer flakes ...
At the present time, the prices of the raw materials cadmium and tellurium are a negligible proportion of the cost of CdTe solar cells and other CdTe devices. However, tellurium is a relatively rare element (1–5 parts per billion in the Earth's crust; see Abundances of the elements (data page) ).
Semiconductor Design for Manufacturing (DFM) is a comprehensive set of principles and techniques used in integrated circuit (IC) design to ensure that those designs transition smoothly into high-volume manufacturing with optimal yield and reliability. DFM focuses on anticipating potential fabrication issues and proactively modifying chip ...
As indirect band gap materials the electrons dissipate energy in the form of heat within the crystalline silicon and germanium diodes, but in gallium arsenide phosphide (GaAsP) and gallium phosphide (GaP) semiconductors, the electrons dissipate energy by emitting photons. If the semiconductor is translucent, the junction becomes the source of ...
Gallium nitride (Ga N) is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronics, [9] [10] [11] high-power and high-frequency ...