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The optional second step (for bare silicon wafers) is a short immersion in a 1:100 or 1:50 solution of aqueous HF (hydrofluoric acid) at 25 °C for about fifteen seconds, in order to remove the thin oxide layer and some fraction of ionic contaminants. If this step is performed without ultra high purity materials and ultra clean containers, it ...
Etching is a critically important process module in fabrication, and every wafer undergoes many etching steps before it is complete. For many etch steps, part of the wafer is protected from the etchant by a "masking" material which resists etching. In some cases, the masking material is a photoresist which has been patterned using photolithography.
Reactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching . RIE uses chemically reactive plasma to remove material deposited on wafers .
All-in-one self-etch adhesive and a single component universal adhesive, used in the adhesion of direct and indirect dental restorations. Also known as a "bonderizer" bonding agents (spelled dentin bonding agents in American English) are resin materials used to make a dental composite filling material adhere to both dentin and enamel.
Piranha solution, also known as piranha etch, is a mixture of sulfuric acid (H 2 SO 4) and hydrogen peroxide (H 2 O 2). The resulting mixture is used to clean organic residues off substrates , for example silicon wafers . [ 1 ]
Fig. 1. The surface of a MEMS device is cleaned with bright, blue oxygen plasma in a plasma etcher to rid it of carbon contaminants. (100mTorr, 50W RF) Plasma cleaning is the removal of impurities and contaminants from surfaces through the use of an energetic plasma or dielectric barrier discharge (DBD) plasma created from gaseous species.
In semiconductor manufacturing, isotropic etching is a method commonly used to remove material from a substrate via a chemical process using an etchant substance. The etchant may be in liquid-, gas- or plasma -phase, [ 1 ] although liquid etchants such as buffered hydrofluoric acid (BHF) for silicon dioxide etching are more often used.
Dry etching refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of ions (usually a plasma of reactive gases such as fluorocarbons, oxygen, chlorine, boron trichloride; sometimes with addition of nitrogen, argon, helium and other gases) that dislodge portions of the material from the exposed surface.