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  2. Electromigration - Wikipedia

    en.wikipedia.org/wiki/Electromigration

    Pure copper wires can withstand approximately five times more current density than aluminum wires while maintaining similar reliability requirements. [10] This is mainly due to the higher electromigration activation energy levels of copper, caused by its superior electrical and thermal conductivity as well as its higher melting point.

  3. Electrochemical migration - Wikipedia

    en.wikipedia.org/wiki/Electrochemical_migration

    Electrochemical migration (ECM) is the dissolution and movement of metal ions in presence of electric potential, which results in the growth of dendritic structures between anode and cathode. The process is most commonly observed in printed circuit boards where it may significantly decrease the insulation between conductors.

  4. Kirkendall effect - Wikipedia

    en.wikipedia.org/wiki/Kirkendall_effect

    The Kirkendall effect is the motion of the interface between two metals that occurs due to the difference in diffusion rates of the metal atoms. The effect can be observed, for example, by placing insoluble markers at the interface between a pure metal and an alloy containing that metal, and heating to a temperature where atomic diffusion is reasonable for the given timescale; the boundary ...

  5. Conductive anodic filament - Wikipedia

    en.wikipedia.org/wiki/Conductive_anodic_filament

    Conductive anodic filament, also called CAF, is a metallic filament that forms from an electrochemical migration process and is known to cause printed circuit board (PCB) failures. Mechanism [ edit ]

  6. Migratory insertion - Wikipedia

    en.wikipedia.org/wiki/Migratory_insertion

    However, often the two are used interchangeably because the mechanism is sometimes unknown. Therefore, migratory insertion reactions or insertion reactions, for short, are defined not by the mechanism but by the overall regiochemistry wherein one chemical entity interposes itself into an existing bond of typically a second chemical entity e.g.: [1]

  7. Stress migration - Wikipedia

    en.wikipedia.org/wiki/Stress_migration

    Stress migration is a failure mechanism that often occurs in integrated circuit metallization (aluminum, copper). Voids form as result of vacancy migration driven by the hydrostatic stress gradient. Large voids may lead to open circuit or unacceptable resistance increase that impedes the IC performance.

  8. Whisker (metallurgy) - Wikipedia

    en.wikipedia.org/wiki/Whisker_(metallurgy)

    The mechanism behind metal whisker growth is not well understood, but seems to be encouraged by compressive mechanical stresses including: energy gained due to electrostatic polarization of metal filaments in the electric field, [3] [4] residual stresses caused by electroplating, mechanically induced stresses,

  9. Brook rearrangement - Wikipedia

    en.wikipedia.org/wiki/Brook_rearrangement

    A related reaction, involving initial attack at the silicon center, causes migration of one of the silicon groups to the carbonyl carbon, which initiates a Brook-Rearrangement. If the silicon group was chiral, the end product is a chiral silyl ether, as the migration occurs stereospecifically.