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It is also intrinsically less susceptible to electromigration. However, electromigration (EM) continues to be an ever-present challenge to device fabrication, and therefore the EM research for copper interconnects is ongoing (though a relatively new field). [6] In modern consumer electronic devices, ICs rarely fail due to electromigration effects.
Electrochemical migration (ECM) is the dissolution and movement of metal ions in presence of electric potential, which results in the growth of dendritic structures between anode and cathode. The process is most commonly observed in printed circuit boards where it may significantly decrease the insulation between conductors.
Copper mining contributes significantly to copper emissions into fresh waters. Copper is also introduced into freshwater during metal corrosion , degradation, and abrasion of copper. Scrap copper metal is commonly recycled, but at the end of its manufacturing life cycle, it is discarded to landfills, which can leach significant copper into ...
CAF commonly occurs between adjacent vias (i.e. plated through holes) inside a PCB, as the copper migrates along the glass/resin interface from anode to cathode.CAF failures can manifest as current leakage, intermittent electrical shorts, and even dielectric breakdown between conductors in printed circuit boards. [3]
The Kirkendall effect is the motion of the interface between two metals that occurs due to the difference in diffusion rates of the metal atoms. The effect can be observed, for example, by placing insoluble markers at the interface between a pure metal and an alloy containing that metal, and heating to a temperature where atomic diffusion is reasonable for the given timescale; the boundary ...
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Since copper is a better conductor than aluminium, ICs using copper for their interconnects can have interconnects with narrower dimensions, and use less energy to pass electricity through them. Together, these effects lead to ICs with better performance. They were first introduced by IBM, with assistance from Motorola, in 1997. [1]
Stress migration is a failure mechanism that often occurs in integrated circuit metallization (aluminum, copper). Voids form as result of vacancy migration driven by the hydrostatic stress gradient. Large voids may lead to open circuit or unacceptable resistance increase that impedes the IC performance.