Ads
related to: flip-flop in coa
Search results
Results From The WOW.Com Content Network
The term flip-flop has historically referred generically to both level-triggered (asynchronous, transparent, or opaque) and edge-triggered (synchronous, or clocked) circuits that store a single bit of data using gates. [1] Modern authors reserve the term flip-flop exclusively for edge-triggered storage elements and latches for level-triggered ones.
A shift register is a type of digital circuit using a cascade of flip-flops where the output of one flip-flop is connected to the input of the next. They share a single clock signal, which causes the data stored in the system to shift from one location to the next.
Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The static qualifier differentiates SRAM from dynamic random-access memory (DRAM):
An asynchronous (ripple) counter is a "chain" of toggle (T) flip-flops wherein the least-significant flip-flop (bit 0) is clocked by an external signal (the counter input clock), and all other flip-flops are clocked by the output of the nearest, less significant flip-flop (e.g., bit 0 clocks the bit 1 flip-flop, bit 1 clocks the bit 2 flip-flop ...
The first is a global stall signal. This signal, when activated, prevents instructions from advancing down the pipeline, generally by gating off the clock to the flip-flops at the start of each stage. The disadvantage of this strategy is that there are a large number of flip flops, so the global stall signal takes a long time to propagate.
SRAM (Static random-access memory) – This stores each bit of data in a circuit called a flip-flop, made of 4 to 6 transistors. SRAM is less dense and more expensive per bit than DRAM, but faster and does not require memory refresh. It is used for smaller cache memories in computers.
Modern random-access memory (RAM) uses MOS field-effect transistors (MOSFETs) as flip-flops, along with MOS capacitors for certain types of RAM. The SRAM memory cell is a type of flip-flop circuit, typically implemented using MOSFETs. These require very low power to maintain the stored value when not being accessed.
In digital logic, a don't-care term [1] [2] (abbreviated DC, historically also known as redundancies, [2] irrelevancies, [2] optional entries, [3] [4] invalid combinations, [5] [4] [6] vacuous combinations, [7] [4] forbidden combinations, [8] [2] unused states or logical remainders [9]) for a function is an input-sequence (a series of bits) for which the function output does not matter.