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Silicon nitride is a chemical compound of the elements silicon and nitrogen. Si 3 N 4 ... (PECVD) technology, which works at rather low temperature (≤ 250 °C) ...
PECVD machine at LAAS technological facility in Toulouse, France. Plasma-enhanced chemical vapor deposition (PECVD) is a chemical vapor deposition process used to deposit thin films from a gas state to a solid state on a substrate. Chemical reactions are involved in the process, which occur after creation of a plasma of the reacting gases.
DC plasma (violet) enhances the growth of carbon nanotubes in a laboratory-scale PECVD (plasma-enhanced chemical vapor deposition) apparatus. Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin ...
For growing nitrides and related materials, a special coating, typically of silicon nitride or tantalum carbide, on the graphite susceptor is necessary to prevent corrosion by ammonia (NH 3) gas. One type of reactor used to carry out MOCVD is a cold-wall reactor.
Plasma (argon-only on the left, argon and silane on the right) inside a prototype LEPECVD reactor at the LNESS laboratory in Como, Italy.. Low-energy plasma-enhanced chemical vapor deposition (LEPECVD) is a plasma-enhanced chemical vapor deposition technique used for the epitaxial deposition of thin semiconductor (silicon, germanium and SiGe alloys) films.
In 1987 Jaeger and Hezel at ISFH (Institute for Solar Energy Research in Hamelin) successfully produced a new BSC design based on a single junction n + p, in which the rear contact was replaced by a metal grid and all intermetallic surfaces were passivated with PECVD-grown silicon nitride, this resulting in 15% and 13.2% under front and rear ...
During atomic layer deposition, a film is grown on a substrate by exposing its surface to alternate gaseous species (typically referred to as precursors or reactants). In contrast to chemical vapor deposition, the precursors are never present simultaneously in the reactor, but they are inserted as a series of sequential, non-overlapping pulses.
The plasma-enhanced chemical vapor deposition (PECVD) process is relatively inefficient at materials utilization with approximately 85% of the silane being wasted. To reduce that waste and the ecological footprint of a-Si:H-based solar cells further several recycling efforts have been developed.
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