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Immersion lithography is a technique used in semiconductor manufacturing to enhance the resolution and accuracy of the lithographic process. It involves using a liquid medium, typically water, between the lens and the wafer during exposure.
This method, called immersion lithography, is the current cutting edge of practical production technology. It works because numerical aperture is a function of the maximum angle of light that can enter the lens and the refractive index of the medium through which the light passes. When water is employed as the medium, it greatly increases ...
Optical proximity correction (OPC) is a photolithography enhancement technique commonly used to compensate for image errors due to diffraction or process effects. The need for OPC is seen mainly in the making of semiconductor devices and is due to the limitations of light to maintain the edge placement integrity of the original design, after ...
Hence, it is commonly used for the origination of master structures for subsequent micro or nano replication processes [4] (e.g. nanoimprint lithography) or for testing photoresist processes for lithography techniques based on new wavelengths (e.g., EUV or 193 nm immersion). In addition, interfering laser beams of high-power pulsed lasers ...
Many technologies once termed "next generation" have entered commercial production, and open-air photolithography, with visible light projected through hand-drawn photomasks, has gradually progressed to deep-UV immersion lithography using optical proximity correction, inverse lithography technology, off-axis illumination, phase-shift masks ...
High-index immersion lithography is the newest extension of 193 nm lithography to be considered. In 2006, features less than 30 nm were demonstrated by IBM using this technique. [72] These systems used CaF 2 calcium fluoride lenses. [73] [74] Immersion lithography at 157 nm was explored. [75]
Multiple patterning with immersion scanners can be expected to have higher wafer productivity than EUV, even with as many as 4 passes per layer, due to faster wafer exposure throughput (WPH), a larger number of tools being available, and higher uptime.
In photolithography, several masks are used in turn, each one reproducing a layer of the completed design, and together known as a mask set. A curvilinear photomask has patterns with curves, which is a departure from conventional photomasks which only have patterns that are completely vertical or horizontal, known as manhattan geometry.