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The company provides products for customers and manufacturers such as foundries, memory and logic devices. [ 1 ] [ 2 ] In December 2013, Mattson Technology announced its paradigmE XP, next-generation etch system, extending the company's etch technology and enabling chipmakers to address processing challenges for leading-edge, three-dimensional ...
Etching is a critically important process module in fabrication, and every wafer undergoes many etching steps before it is complete. For many etch steps, part of the wafer is protected from the etchant by a "masking" material which resists etching. In some cases, the masking material is a photoresist which has been patterned using photolithography.
Wet etching was widely used in the 1960s and 1970s, [144] [145] but it was replaced by dry etching/plasma etching starting at the 10 micron to 3 micron nodes. [146] [147] This is because wet etching makes undercuts (etching under mask layers or resist layers with patterns). [148] [149] [150] Dry etching has become the dominant etching technique ...
Xenon difluoride, bromine trifluoride, chlorine trifluoride and fluorine can be used for gaseous silicon etching. [6] [7] Xenon difluoride is most commonly used to etch silicon in academia and industry, because it has a high selectivity towards other semiconductor materials, allows high process control and is easy to use at room temperature. [8 ...
The first attempts of MACE consisted of a silicon wafer that was partially covered with aluminum and then immersed in an etching solution. [2] This material combination led to an increased etching rate compared to bare silicon. Often this very first attempt is also called galvanic etching instead of metal assisted chemical etching. [citation ...
Buffered oxide etch (BOE), also known as buffered HF or BHF, is a wet etchant used in microfabrication. It is a mixture of a buffering agent, such as ammonium fluoride NH 4 F, and hydrofluoric acid (HF). Its primary use is in etching thin films of silicon nitride (Si 3 N 4) or silicon dioxide (SiO 2), by the reaction: SiO 2 + 4HF + 2NH 4 F → ...
Simplified illustration of the process of fabrication of a CMOS inverter on p-type substrate in semiconductor microfabrication. Each etch step is detailed in the following image. The diagrams are not to scale, as in real devices, the gate, source, and drain contacts are not normally located in the same plane. Detail of an etch step.
Following that the underlying material can be etched through the hardmask. Finally the hardmask is removed with a further etching process. [2] Hardmask materials can be metal or dielectric. Silicon based masks such as silicon dioxide or silicon carbide are usually used for etching low-κ dielectrics. [3]