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Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices , including transistors . [ 1 ] MBE is used to make diodes and MOSFETs (MOS field-effect transistors ) at microwave frequencies, and to manufacture the lasers used to read optical discs ...
Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. [1] [2] For most technological applications, single-domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an ...
The Knudsen cell is used to measure the vapor pressures of a solid with very low vapor pressure. Such a solid forms a vapor at low pressure by sublimation.The vapor slowly effuses through the pinhole, and the loss of mass is proportional to the vapor pressure and can be used to determine this pressure. [1]
Silicon epi wafers were first developed around 1966 and achieved commercial acceptance by the early 1980s. [6] Methods for growing the epitaxial layer on monocrystalline silicon or other wafers include: various types of chemical vapor deposition (CVD) classified as Atmospheric pressure CVD (APCVD) or metal organic chemical vapor deposition (MOCVD), as well as molecular beam epitaxy (MBE). [7]
Molecular-beam epitaxy is a technique used to construct thin epitaxial films of materials ranging from oxides to semiconductors to metals. Different beams of atoms and molecules in an ultra-high vacuum environment are shot onto a nearly atomically clean crystal, creating a layering effect.
Molecular-beam epitaxy (MBE) is an established technique for growing semiconductor devices with atomic monolayer thickness control. MBE has been used to grow different TMDs, such as MoSe 2 , WSe 2 , and early transition metals , including titanium , vanadium , and chromium , tellurides, [ 47 ] [ 48 ] [ 49 ] resulting in extremely clean samples ...
Selective area epitaxy is the local growth of epitaxial layer through a patterned amorphous dielectric mask (typically SiO 2 or Si 3 N 4) deposited on a semiconductor substrate. Semiconductor growth conditions are selected to ensure epitaxial growth on the exposed substrate, but not on the dielectric mask. [ 1 ]
[7] [8] This method is a predecessor of NMR. The invention of the maser in 1957 by James P. Gordon, Herbert J. Zeiger and Charles H. Townes was made possible by a molecular beam of ammonia and a special electrostatic quadrupole focuser. [9] The study of molecular beam led to the development of molecular-beam epitaxy in the 1960s.