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The carrier lifetime can vary significantly depending on the materials and construction of the semiconductor. Carrier lifetime plays an important role in bipolar transistors and solar cells. In indirect band gap semiconductors, the carrier lifetime strongly depends on the concentration of recombination centers. Gold atoms act as highly ...
Non-radiative life time is the average time before an electron in the conduction band of a semiconductor recombines with a hole. It is an important parameter in optoelectronics where radiative recombination is required to produce a photon; if the non-radiative life time is shorter than the radiative, a carrier is more likely to recombine non ...
Outlines of some packaged semiconductor devices. A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators.
Semiconductor characterization techniques are used to characterize a semiconductor material or device (p–n junction, Schottky diode, solar cell, etc.).Some examples of semiconductor properties that could be characterized include the depletion width, carrier concentration, carrier generation and recombination rates, carrier lifetimes, defect concentration, and trap states.
The semiconductor materials used in electronic devices are doped under precise conditions to control the concentration and regions of p- and n-type dopants. A single semiconductor device crystal can have many p- and n-type regions; the p–n junctions between these regions are responsible for the useful electronic behavior.
Molecular-beam epitaxy takes place in high vacuum or ultra-high vacuum (10 −8 –10 −12 Torr).The most important aspect of an MBE process is the deposition rate (typically less than 3,000 nm per hour) that allows the films to grow epitaxially (in layers on top of the existing crystal).
Historically, the earliest microfabrication processes were used for integrated circuit fabrication, also known as "semiconductor manufacturing" or "semiconductor device fabrication". In the last two decades, microelectromechanical systems (MEMS), microsystems (European usage), micromachines (Japanese terminology) and their subfields have re ...
The 60:40 rule is a heuristic for the specific case of junctions between the semiconductor GaAs and the alloy semiconductor Al x Ga 1−x As. As the x in the Al x Ga 1− x As side is varied from 0 to 1, the ratio Δ E C / Δ E V {\displaystyle \Delta E_{C}/\Delta E_{V}} tends to maintain the value 60/40.