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The VMOS structure has a V-groove at the gate region. A VMOS (/ ˈ v iː m ɒ s /) (vertical metal oxide semiconductor or V-groove MOS) transistor is a type of metal–oxide–semiconductor field-effect transistor ().
Full hybrid-pi model. The full model introduces the virtual terminal, B′, so that the base spreading resistance, r bb, (the bulk resistance between the base contact and the active region of the base under the emitter) and r b′e (representing the base current required to make up for recombination of minority carriers in the base region) can be represented separately.
A heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) that uses different semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it can handle signals of very high frequencies, up to several hundred GHz .
The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.
The PMOS transistor's channel is in a low resistance state, connecting Vdd to Q. Q, therefore, registers Vdd. On the other hand, when the voltage of A is high (i.e. close to Vdd), the PMOS transistor is in a high resistance state, disconnecting Vdd from Q. The NMOS transistor is in a low resistance state, connecting Vss to Q. Now, Q registers Vss.
The bootstrap circuit uses a coupling capacitor, formed from the gate/source capacitance of a transistor, to drive a signal line to slightly greater than the supply voltage. [10] Some all-pMOS integrated circuits such as the Intel 4004 and the Intel 8008 use that 2-transistor "bootstrap load" circuit. [11] [12] [13]
Diode–transistor logic improved the fan-out up to about 7, and reduced the power. Some DTL designs used two power supplies with alternating layers of NPN and PNP transistors to increase the fan-out. Transistor–transistor logic (TTL) was a great improvement over these. In early devices, fan-out improved to 10, and later variations reliably ...
The tunnel field-effect transistor (TFET) is an experimental type of transistor. Even though its structure is very similar to a metal–oxide–semiconductor field-effect transistor (), the fundamental switching mechanism differs, making this device a promising candidate for low power electronics.