Search results
Results From The WOW.Com Content Network
Full hybrid-pi model. The full model introduces the virtual terminal, B′, so that the base spreading resistance, r bb, (the bulk resistance between the base contact and the active region of the base under the emitter) and r b′e (representing the base current required to make up for recombination of minority carriers in the base region) can be represented separately.
A VMOS (/ ˈ v iː m ɒ s /) (vertical metal oxide semiconductor or V-groove MOS) transistor is a type of metal–oxide–semiconductor field-effect transistor . VMOS is also used to describe the V-groove shape vertically cut into the substrate material.
For NPN open collector outputs, the emitter of the NPN transistor is internally connected to ground, [1] so the NPN open collector internally forms either a short-circuit (technically low impedance or "low-Z") connection to the low voltage (which could be ground) when the transistor is switched on, or an open-circuit (technically high impedance ...
Bootstrapping is a technique in the field of electronics where part of the output of a system is used at startup.. A bootstrap circuit is one where part of the output of an amplifier stage is applied to the input, so as to alter the input impedance of the amplifier.
The input signal is applied across the ground and the base circuit of the transistor. The output signal appears across ground and the collector of the transistor. Since the emitter is connected to the ground, it is common to signals, input and output. The common-emitter circuit is the most widely used of junction transistor amplifiers.
There are three types of unijunction transistor: The original unijunction transistor, or UJT, is a simple device that is essentially a bar of n-type semiconductor material into which p-type material has been diffused somewhere along its length, fixing the device parameter (the "intrinsic stand-off ratio"). The 2N2646 model is the most commonly ...
A heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) that uses different semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it can handle signals of very high frequencies, up to several hundred GHz .
Diode–transistor logic improved the fan-out up to about 7, and reduced the power. Some DTL designs used two power supplies with alternating layers of NPN and PNP transistors to increase the fan-out. Transistor–transistor logic (TTL) was a great improvement over these. In early devices, fan-out improved to 10, and later variations reliably ...