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where the combination V ov = V GS − V th is called the overdrive voltage, [41] and where V DSsat = V GS − V th accounts for a small discontinuity in which would otherwise appear at the transition between the triode and saturation regions. Another key design parameter is the MOSFET output resistance r out given by:
Like other MOSFETs, PMOS transistors have four modes of operation: cut-off (or subthreshold), triode, saturation (sometimes called active), and velocity saturation. While PMOS logic is easy to design and manufacture (a MOSFET can be made to operate as a resistor, so the whole circuit can be made with PMOS FETs), it has several shortcomings as well.
Like other MOSFETs, nMOS transistors have four modes of operation: cut-off (or subthreshold), triode, saturation (sometimes called active), and velocity saturation. NMOS AND-by-default logic can produce unusual glitches or buggy behavior in NMOS components, such as the 6502 "illegal opcodes" which are absent in CMOS 6502s.
NXP 7030AL - N-channel TrenchMOS logic level FET IRF640 Power Mosfet die. The power MOSFET is the most widely used power semiconductor device in the world. [3] As of 2010, the power MOSFET accounts for 53% of the power transistor market, ahead of the insulated-gate bipolar transistor (27%), RF power amplifier (11%) and bipolar junction transistor (9%). [24]
In a depletion-mode MOSFET, the device is normally on at zero gate–source voltage. Such devices are used as load "resistors" in logic circuits (in depletion-load NMOS logic, for example). For N-type depletion-load devices, the threshold voltage might be about −3 V, so it could be turned off by pulling the gate 3 V negative (the drain, by ...
Cross-sectional view of a MOSFET type field-effect transistor, showing source, gate and drain terminals, and insulating oxide layer. The field-effect transistor (FET) is a type of transistor that uses an electric field to control the current through a semiconductor. It comes in two types: junction FET (JFET) and metal-oxide-semiconductor FET ...
The point that separates the triode region and the saturation region is roughly the point where V DS is equal to V GS on each of the IV curves. In the triode region, changes in the drain-to-source voltage will not change (or change very little) the resistance between the JFET's drain and source terminals.
Cross section of a MOSFET operating in the saturation region. Channel length modulation (CLM) is an effect in field effect transistors, a shortening of the length of the inverted channel region with increase in drain bias for large drain biases. The result of CLM is an increase in current with drain bias and a reduction of output resistance.