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A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, in the detection of ...
p–n junctions represent the simplest case of a semiconductor electronic device; a p-n junction by itself, when connected on both sides to a circuit, is a diode. More complex circuit components can be created by further combinations of p-type and n-type semiconductors; for example, the bipolar junction transistor (BJT) is a semiconductor in ...
At the junction of two different types of the same semiconductor (e.g., p-n junction) the bands vary continuously since the dopants are sparsely distributed and only perturb the system. At the junction of two different semiconductors there is a sharp shift in band energies from one material to the other; the band alignment at the junction (e.g ...
A semiconductor diode is a device typically made from a single p–n junction.At the junction of a p-type and an n-type semiconductor, there forms a depletion region where current conduction is inhibited by the lack of mobile charge carriers.
Inside the depletion region, both diffusion current and drift current are present. At equilibrium in a p–n junction, the forward diffusion current in the depletion region is balanced with a reverse drift current, so that the net current is zero. The diffusion constant for a doped material can be determined with the Haynes–Shockley experiment.
Assume that the semiconductor wafer is p-type material.Also assume a ring of n-type material is placed around a transistor, and placed beneath the transistor. If the p-type material within the n-type ring is now connected to the negative terminal of the power supply and the n-type ring is connected to the positive terminal, the 'holes' in the p-type region are pulled away from the p–n ...
The Zener diode's operation depends on the heavy doping of its p–n junction. The depletion region formed in the diode is very thin (< 1 μm) and the electric field is consequently very high (about 500 kV/m) even for a small reverse bias voltage of about 5 V, allowing electrons to tunnel from the valence band of the p-type material to the ...
The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact. [1] (In contrast, a rectifying semiconductor–semiconductor junction, the most common semiconductor device today, is known as a p–n junction.)