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A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, in the detection of ...
p–n junctions represent the simplest case of a semiconductor electronic device; a p-n junction by itself, when connected on both sides to a circuit, is a diode. More complex circuit components can be created by further combinations of p-type and n-type semiconductors; for example, the bipolar junction transistor (BJT) is a semiconductor in ...
This allows the diode to operate at higher signal frequencies, at the expense of a higher forward voltage drop. Gold-doped diodes are faster than other p–n diodes (but not as fast as Schottky diodes). They also have less reverse-current leakage than Schottky diodes (but not as good as other p–n diodes). [43] [44] A typical example is the 1N914.
Tunnel diodes and Gunn diodes are examples of components that have negative resistance. Hysteresis vs single-valued: Devices which have hysteresis; that is, in which the current–voltage relation depends not only on the present applied input but also on the past history of inputs, have I–V curves consisting of families of closed loops. Each ...
Shown is the graphical definition of the Schottky barrier height, Φ B, for an n-type semiconductor as the difference between the interfacial conduction band edge E C and Fermi level E F. Whether a given metal-semiconductor junction is an ohmic contact or a Schottky barrier depends on the Schottky barrier height, Φ B, of the junction.
Any p–n junction, if illuminated, is potentially a photodiode. Semiconductor devices such as diodes, transistors and ICs contain p–n junctions, and will not function correctly if they are illuminated by unwanted light. [11] [12] This is avoided by encapsulating devices in opaque housings.
The Zener diode's operation depends on the heavy doping of its p–n junction. The depletion region formed in the diode is very thin (< 1 μm) and the electric field is consequently very high (about 500 kV/m) even for a small reverse bias voltage of about 5 V, allowing electrons to tunnel from the valence band of the p-type material to the ...
Semiconductor characterization techniques are used to characterize a semiconductor material or device (p–n junction, Schottky diode, solar cell, etc.).Some examples of semiconductor properties that could be characterized include the depletion width, carrier concentration, carrier generation and recombination rates, carrier lifetimes, defect concentration, and trap states.