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In ionizing radiation detection physics, a semiconductor detector is a device that uses a semiconductor (usually silicon or germanium) to measure the effect of incident charged particles or photons. Semiconductor detectors find broad application for radiation protection , gamma and X-ray spectrometry , and as particle detectors .
Hybrid pixel detectors are a type of ionizing radiation detector consisting of an array of diodes based on semiconductor technology and their associated electronics. The term “hybrid” stems from the fact that the two main elements from which these devices are built, the semiconductor sensor and the readout chip (also known as application-specific integrated circuit or ASIC), are ...
In a CCD image sensor, pixels are represented by p-doped metal–oxide–semiconductor (MOS) capacitors.These MOS capacitors, the basic building blocks of a CCD, [1] are biased above the threshold for inversion when image acquisition begins, allowing the conversion of incoming photons into electron charges at the semiconductor-oxide interface; the CCD is then used to read out these charges.
CIS devices typically produce lower image quality compared to CCD devices; in particular, the depth of field is greatly limited, which poses a problem for material that is not perfectly flat. However, a CIS contact sensor is smaller and lighter than a CCD line sensor, and allows all the necessary optical elements to be included in a compact ...
A micrograph of the corner of the photosensor array of a webcam digital camera Image sensor (upper left) on the motherboard of a Nikon Coolpix L2 6 MP. The two main types of digital image sensors are the charge-coupled device (CCD) and the active-pixel sensor (CMOS sensor), fabricated in complementary MOS (CMOS) or N-type MOS (NMOS or Live MOS) technologies.
Charge coupled device (CCD) cameras were first applied to transmission electron microscopy in the 1980s and later became widespread. [3] [4] For use in a TEM, CCDs are typically coupled with a scintillator such as single crystal Yttrium aluminium garnet (YAG) in which electrons from the electron beam are converted to photons, which are then transferred to the sensor of the CCD via a fiber ...
An active-pixel sensor (APS) is an image sensor, which was invented by Peter J.W. Noble in 1968, where each pixel sensor unit cell has a photodetector (typically a pinned photodiode) and one or more active transistors. [1] [2] In a metal–oxide–semiconductor (MOS) active-pixel sensor, MOS field-effect transistors (MOSFETs) are used as ...
Based on device structure, photodetectors can be classified into the following categories: MSM Photodetector: A metal-semiconductor-metal (MSM) photodetector consists of a semiconductor layer sandwiched between two metal electrodes. The metal electrodes are interdigitated, forming a series of alternating fingers or grids.