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A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively "negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki and Yuriko Kurose when working at Tokyo Tsushin Kogyo, now known as Sony .
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Tunnel diode schematic symbol. Russian version of Image:Tunnel diode symbol.svg; Ссылка на ГОСТ 2.730-73; Diode symbols. Diode symbol.
Gunn diodes These are similar to tunnel diodes in that they are made of materials such as GaAs or InP that exhibit a region of negative differential resistance. With appropriate biasing, dipole domains form and travel across the diode, allowing high frequency microwave oscillators to be built. Light-emitting diodes (LEDs)
A resonant-tunneling diode (RTD) is a diode with a resonant-tunneling structure in which electrons can tunnel through some resonant states at certain energy levels. The current–voltage characteristic often exhibits negative differential resistance regions. All types of tunneling diodes make use of quantum mechanical tunneling. Characteristic ...
In electronics, a tunnel junction is a barrier, such as a thin insulating layer or electric potential, between two electrically conducting materials. Electrons (or quasiparticles ) pass through the barrier by the process of quantum tunnelling .
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Tunneling applications include the tunnel diode, [5] quantum computing, flash memory, and the scanning tunneling microscope. Tunneling limits the minimum size of devices used in microelectronics because electrons tunnel readily through insulating layers and transistors that are thinner than about 1 nm. [6]