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  2. Load cell - Wikipedia

    en.wikipedia.org/wiki/Load_cell

    A load cell converts a force such as tension, compression, pressure, or torque into a signal (electrical, pneumatic or hydraulic pressure, ...

  3. Instruction set architecture - Wikipedia

    en.wikipedia.org/wiki/Instruction_set_architecture

    CISC — Often machines are limited to one memory operand per instruction: load a,reg1; add b,reg1; store reg1,c; This requires a load/store pair for any memory movement regardless of whether the add result is an augmentation stored to a different place, as in C = A+B, or the same memory location: A = A+B. C = A+B needs three instructions.

  4. Load–store architecture - Wikipedia

    en.wikipedia.org/wiki/Load–store_architecture

    For instance, in a load–store approach both operands and destination for an ADD operation must be in registers. This differs from a register–memory architecture (for example, a CISC instruction set architecture such as x86 ) in which one of the operands for the ADD operation may be in memory, while the other is in a register.

  5. History of computing hardware (1960s–present) - Wikipedia

    en.wikipedia.org/wiki/History_of_computing...

    Branch and Load Location in Index Word (BLX) on the IBM 7070 Transfer and Set indeX (TSX) on the IBM 7090 Jump and Save PC (JSP) on the DEC PDP-6 and PDP-10 Transfer and Set Xn (TSXn) on the GE-600 series Branch and Link (BAL) on the IBM System/360 Call instructions that use an index register as a stack pointer and push return information onto ...

  6. IBM System/360 - Wikipedia

    en.wikipedia.org/wiki/IBM_System/360

    The IBM System/360 (S/360) is a family of mainframe computer systems announced by IBM on April 7, 1964, [1] and delivered between 1965 and 1978. [2] System/360 was the first family of computers designed to cover both commercial and scientific applications and a complete range of applications from small to large.

  7. Failure of electronic components - Wikipedia

    en.wikipedia.org/wiki/Failure_of_electronic...

    With EEPROM cells, this is the major factor limiting the number of erase-write cycles. Migration of charge carriers from floating gates. This limits the lifetime of stored data in EEPROM and flash EPROM structures. Improper passivation.

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