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Cross-sectional view of a MOSFET type field-effect transistor, showing source, gate and drain terminals, and insulating oxide layer. The field-effect transistor (FET) is a type of transistor that uses an electric field to control the current through a semiconductor. It comes in two types: junction FET (JFET) and metal-oxide-semiconductor FET ...
Similarly, in field-effect transistors, and MOSFETs in particular, transconductance is the change in the drain current divided by the small change in the gate–source voltage with a constant drain–source voltage. Typical values of g m for a small-signal field-effect transistor are 1 to 30 mS.
In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device.
The reverse is true for the p-channel "enhancement-mode" MOS transistor. When V GS = 0 the device is “OFF” and the channel is open / non-conducting. The application of a negative gate voltage to the p-type "enhancement-mode" MOSFET enhances the channels conductivity turning it “ON”.
However, in a semiconductor the lower density of electrons (and possibly holes) that can respond to an applied field is sufficiently small that the field can penetrate quite far into the material. This field penetration alters the conductivity of the semiconductor near its surface, and is called the field effect .
In solid-state physics, the valence band and conduction band are the bands closest to the Fermi level, and thus determine the electrical conductivity of the solid. In nonmetals, the valence band is the highest range of electron energies in which electrons are normally present at absolute zero temperature, while the conduction band is the lowest range of vacant electronic states.
In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region, space charge region, or space charge layer, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers have diffused away, or been forced away by an electric field. The only elements left ...
The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p ...