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The resulting average drift mobility is: [20] = ¯ where q is the elementary charge, m* is the carrier effective mass, and τ is the average scattering time. If the effective mass is anisotropic (direction-dependent), m * is the effective mass in the direction of the electric field.
There are two recognized types of charge carriers in semiconductors.One is electrons, which carry a negative electric charge.In addition, it is convenient to treat the traveling vacancies in the valence band electron population as a second type of charge carrier, which carry a positive charge equal in magnitude to that of an electron.
Depending on the model, increased temperature may either increase or decrease carrier mobility, applied electric field can increase mobility by contributing to thermal ionization of trapped charges, and increased concentration of localized states increases the mobility as well. Charge transport in the same material may have to be described by ...
Electrical mobility is the basis for electrostatic precipitation, used to remove particles from exhaust gases on an industrial scale.The particles are given a charge by exposing them to ions from an electrical discharge in the presence of a strong field.
In solid-state physics of semiconductors, carrier generation and carrier recombination are processes by which mobile charge carriers (electrons and electron holes) are created and eliminated. Carrier generation and recombination processes are fundamental to the operation of many optoelectronic semiconductor devices , such as photodiodes , light ...
The proportionality constant is known as mobility of the carrier, which is a material property. A good conductor would have a high mobility value for its charge carrier, which means higher velocity, and consequently higher current values for a given electric field strength. There is a limit though to this process and at some high field value, a ...
In general, carriers will exhibit ballistic conduction when where is the length of the active part of the device (e.g., a channel in a MOSFET). λ M F P {\displaystyle \lambda _{\rm {MFP}}} is the mean free path for the carrier which can be given by Matthiessen's rule , written here for electrons:
Charge carrier density, also known as carrier concentration, denotes the number of charge carriers per volume. In SI units, it is measured in m −3. As with any density, in principle it can depend on position. However, usually carrier concentration is given as a single number, and represents the average carrier density over the whole material.