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  2. Lattice constant - Wikipedia

    en.wikipedia.org/wiki/Lattice_constant

    A simple cubic crystal has only one lattice constant, the distance between atoms, but in general lattices in three dimensions have six lattice constants: the lengths a, b, and c of the three cell edges meeting at a vertex, and the angles α, β, and γ between those edges. The crystal lattice parameters a, b, and c have the

  3. Aluminium antimonide - Wikipedia

    en.wikipedia.org/wiki/Aluminium_antimonide

    Aluminium antimonide (AlSb) is a semiconductor of the group III-V family containing aluminium and antimony. The lattice constant is 0.61 nm. The indirect bandgap is approximately 1.6 eV at 300 K, whereas the direct band gap is 2.22 eV. Its electron mobility is 200 cm 2 ·V −1 ·s −1 and hole mobility 400 cm 2 ·V −1 ·s −1 at 300 K.

  4. Gallium antimonide - Wikipedia

    en.wikipedia.org/wiki/Gallium_antimonide

    Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a room temperature lattice constant of about 0.610 nm. [1] It has a room temperature direct bandgap of approximately 0.73 eV. [1] [2] [3]

  5. Indium gallium arsenide - Wikipedia

    en.wikipedia.org/wiki/Indium_gallium_arsenide

    Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are group III elements of the periodic table while arsenic is a group V element. Alloys made of these chemical groups are referred to as "III-V ...

  6. Scandium nitride - Wikipedia

    en.wikipedia.org/wiki/Scandium_nitride

    It has a rock-salt crystal structure with lattice constant of 0.451 nanometer, an indirect bandgap of 0.9 eV and direct bandgap of 2 to 2.4 eV. [1] [2] These crystals can be synthesized by dissolving nitrogen gas with indium-scandium melts, magnetron sputtering, MBE, HVPE and other deposition methods.

  7. Aluminium arsenide - Wikipedia

    en.wikipedia.org/wiki/Aluminium_arsenide

    Aluminium arsenide is a III-V compound semiconductor material and is an advantageous material for the manufacture of optoelectronic devices, such as light emitting diodes. Aluminium arsenide can be prepared using well-known methods, such as liquid and vapor-phase epitaxy techniques or melt-growth techniques.

  8. Miller index - Wikipedia

    en.wikipedia.org/wiki/Miller_index

    This is based on the fact that a reciprocal lattice vector (the vector indicating a reciprocal lattice point from the reciprocal lattice origin) is the wavevector of a plane wave in the Fourier series of a spatial function (e.g., electronic density function) which periodicity follows the original Bravais lattice, so wavefronts of the plane wave ...

  9. List of semiconductor materials - Wikipedia

    en.wikipedia.org/wiki/List_of_semiconductor...

    A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups IIIV), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).