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FlexFET is a planar, independently double-gated transistor with a damascene metal top gate MOSFET and an implanted JFET bottom gate that are self-aligned in a gate trench. . This device is highly scalable due to its sub-lithographic channel length; non-implanted ultra-shallow source and drain extensions; non-epi raised source and drain regions; and gate-last fl
The dual-gate MOSFET has a tetrode configuration, where both gates control the current in the device. It is commonly used for small-signal devices in radio frequency applications where biasing the drain-side gate at constant potential reduces the gain loss caused by Miller effect , replacing two separate transistors in cascode configuration.
The MOSFET is also capable of handling higher power than the JFET. [33] The MOSFET was the first truly compact transistor that could be miniaturised and mass-produced for a wide range of uses. [6] The MOSFET thus became the most common type of transistor in computers, electronics, [34] and communications technology (such as smartphones). [35]
A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.
A dual-gate MOSFET often functions as a "one-transistor" cascode [citation needed]. Common in the front ends of sensitive VHF receivers, a dual-gate MOSFET is operated as a common-source amplifier with the primary gate (usually designated "gate 1" by MOSFET manufacturers) connected to the input and the second gate grounded (bypassed ...
In a depletion-mode MOSFET, the device is normally on at zero gate–source voltage. Such devices are used as load "resistors" in logic circuits (in depletion-load NMOS logic, for example). For N-type depletion-load devices, the threshold voltage might be about −3 V, so it could be turned off by pulling the gate 3 V negative (the drain, by ...
LDMOS (laterally-diffused metal-oxide semiconductor) [1] is a planar double-diffused MOSFET (metal–oxide–semiconductor field-effect transistor) used in amplifiers, including microwave power amplifiers, RF power amplifiers and audio power amplifiers. These transistors are often fabricated on p/p + silicon epitaxial layers.
The most common type of FET amplifier is the MOSFET amplifier, which uses metal–oxide–semiconductor FETs (MOSFETs). The main advantage of a FET used for amplification is that it has very high input impedance and low output impedance .