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  2. Soldering - Wikipedia

    en.wikipedia.org/wiki/Soldering

    Lead free soldering requires higher soldering temperatures than lead/tin soldering. Sn Pb 63/37 eutectic solder melts at 183 °C . SAC lead-free solder melts at 217–220 °C .

  3. Solder alloys - Wikipedia

    en.wikipedia.org/wiki/Solder_alloys

    Wets many surfaces incl. quartz, glass, and many ceramics. Deforms indefinitely under load. Does not become brittle even at low temperatures. Used as a solder in low-temperature physics, will bond to aluminium. Can be used for soldering to thin metal films or glass with an ultrasonic soldering iron. [2] In 75 Pb 25: 156: 165 [12] Pb: No

  4. Glass frit bonding - Wikipedia

    en.wikipedia.org/wiki/Glass_frit_bonding

    Glass frit bonding, also referred to as glass soldering or seal glass bonding, describes a wafer bonding technique with an intermediate glass layer. It is a widely used encapsulation technology for surface micro-machined structures , e.g., accelerometers or gyroscopes . [ 1 ]

  5. Vitreous enamel - Wikipedia

    en.wikipedia.org/wiki/Vitreous_enamel

    Frit for enamelling steel is typically an alkali borosilicate glass with a thermal expansion and glass temperature suitable for coating steel. Raw materials are smelted together between 2,100 and 2,650 °F (1,150 and 1,450 °C) into a liquid glass that is directed out of the furnace and thermal shocked with either water or steel rollers into frit.

  6. Came glasswork - Wikipedia

    en.wikipedia.org/wiki/Came_glasswork

    A patent for the method of "Joining Glass Mosaics" was issued to Sanford Bray in 1886, [14] This new method of joining pieces of stained glass used copper/copper foil instead of lead sashes. By using copper foil, one could now make cylinders, cones, and globe-shaped shades or many other irregular forms.

  7. Eutectic bonding - Wikipedia

    en.wikipedia.org/wiki/Eutectic_bonding

    The temperature of the eutectic bonding procedure is dependent on the used material. The bonding happens at a specific weight-% and temperature, e.g. 370 °C at 2.85 wt-% Si for Au intermediate layer (compare to phase diagram). [5] The procedure of eutectic bonding is divided into following steps: [11] Substrate processing