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The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p ...
A single-electron transistor (SET) is a sensitive electronic device based on the Coulomb blockade effect. In this device the electrons flow through a tunnel junction between source/drain to a quantum dot (conductive island). Moreover, the electrical potential of the island can be tuned by a third electrode, known as the gate, which is ...
Principle diagram of a transmission gate. The control input ST must be able to take to control depending on the supply voltage and switching voltage different logic levels. In principle, a transmission gate is made up of two field-effect transistors (FET), in which – in contrast to traditional discrete field-effect transistors – the ...
3D model of a TO-92 package, commonly used for small bipolar transistors. A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier.
Cross-sectional view of a MOSFET type field-effect transistor, showing source, gate and drain terminals, and insulating oxide layer. The field-effect transistor (FET) is a type of transistor that uses an electric field to control the current through a semiconductor. It comes in two types: junction FET (JFET) and metal-oxide-semiconductor FET ...
CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", / s iː m ɑː s /, /-ɒ s /) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [1]
Date/Time Thumbnail Dimensions User Comment; current: 16:08, 31 August 2012: 720 × 720 (7 KB): Michael9422 {{subst:Upload marker added by en.wp UW}} {{Information |Description = {{en|A simple NPN transistor amplifier circuit diagram with transistor labels.}} |Source = I created a postscript file, and converted it too SVG using the pstoedit program. |Date = ...
The first silicon oxide gate transistor were invented by Frosch and Derick in 1957 at Bell Labs. [21] In 1956, Richard Baker described some discrete diode clamp circuits to keep transistors from saturating. [22] The circuits are now known as Baker clamps. One of those clamp circuits used a single germanium diode to clamp a silicon transistor in ...